field desorption (FD)

Based on field analyzing method and boundary continuity condition,the electric field distribution and two-dimension potential model of the partial buried oxide VDMOS are taken out.

借助场解析方法,首先划分该结构器件的工作区域,由边界连续条件,求解各区的泊松方程,建立部分埋氧结构VDMOS器件二维势分布的解析模型。