Boron Group (Boron,Aluminium,Gallium,Indium,Thallium)

A novel AlGaInP thin-film light emitting diode with omni directional reflector;

新型全方位反射铝镓铟磷薄膜发光二极管

AlInGaN quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy(RF-MBE).

利用射频等离子体辅助分子束外延(RF-MBE)技术在蓝宝石衬底上外延了铝铟镓氮(AlInGaN)四元合金,通过改变Al源的束流生长了不同组分的AlInGaN四元合金,材料生长过程中采用反射式高能电子衍射(RHEED)进行了在位检测。