The calculations of the rate coefficients for dielectronic recombination (DR) along the (CuⅠ) isoelectronic sequence in the ground state Dy~(37+) through Zn-like inner-shell excited configurations were performed using the model of SOSA.
在自旋轨道劈裂阵模型 (SOSA)下 ,通过类锌组态 ,理论计算出类铜Dy3 7+ 的双电子复合速率系数 ,得出其在电子温度 0 。
The calculations of the rate coefficients for dielectronic recombination (DR) along the NiI isoelectronic sequence in the ground state Gd 36+ through Cu like inner shell excited configurations were performed using the model of SOSA.
在自旋轨道劈裂阵模型下 ,通过类铜组态理论计算出类镍 Gd3 6+ 的双电子复合速率系数 ,得出其在电子温度 0 。
02keV ~ 10keV under the model of SOSA (spin-orbit-splitarray).
在自旋轨道劈裂阵模型下，理论计算在０。
Giant Rashba spin splitting in HgTe/HgCdTe quantum wells;
HgTe/HgCdTe量子阱中巨大电子Rashba自旋分裂
