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The aim of the work was to make the comparison of the effect of cerium ion implantation with that of niobium ion implantation by using a MEVVA source at the energy of 40 keV with a dose ranging from 1×1016 ions/cm2to 1×1017 ions/cm2 at the maximum temperature of 130℃.

利用MEVVA源对Zr-4合金分别进行1×1016ions/cm2至1×1017ions/cm2剂量的铈离子与铌离子注入,比较了Ce/Nb离子注入对Zr-4合金氧化行为的影响。

An overview of the FIB direct write technique,applications in milling,implantation,and deposition is given.

概述了聚焦离子束直接写入、离子研磨、离子注入及离子沉积技术。

The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose.

室温下使用MeV能量级Si,F和O离子对 5keVB离子预注入后的n -型单晶Si( 1 0 0 )进行了辐照 ,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化 。