Si nuclear detector

Development of sensitive charge preamplifier for Si nuclear detector;

用于硅半导体探测器的电荷灵敏放大器的研制

This paper models the carrier number in silicon semiconductor using the method of grand canonical ensemble and Fermi-Dirac statistical distributions.

将巨正则系综的Fermi-Dirac(F-D)统计法与计算机模拟相结合,从本征半导体硅出发,探讨温度和光照能量对载流子数的影响,试图从理论上定量分析太阳能电池工作状况,对本征硅半导体中载流子数进行计算机模拟,模拟结果与理论规律基本吻合,此方法可为进一步研究掺杂半导体及氧化物半导体空间电荷层载流子数提供参考。

We demonstrate that micro-Raman spectroscopy (μRS) is a very useful technique that can be used to study a variety of problems related to Si device fabrication.

显微拉曼(μRS)在硅半导体器件生产中有许多重要和独特的应用。